Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator

Gate and drain current behavior with variation of structural parameters

Electron-Transport Characteristics through Aluminum Oxide (100) and (012) in a Metal-Insulator-Metal Junction System: Density Functional Theory-Nonequilibrium Green Function Approach. - Abstract - Europe PMC

High-performance oxide thin-film diode and its conduction mechanism based on ALD-assisted interface engineering - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/D2TC03751C

Role of defects on the transparent conducting properties of binary metal oxide thin film electrodes - ScienceDirect

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Figure 3 from Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric

Nanoscale All-Oxide-Heterostructured Bio-inspired Optoresponsive Nociceptor

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Role of defects on the transparent conducting properties of binary metal oxide thin film electrodes - ScienceDirect

Effect of the doping concentration of the top semiconductor electrode

Unconventional vertical current in bottom electrode/200-nm thick

Characteristics of the RRAM performance of TiON films prepared via (a)

Role of defects on the transparent conducting properties of binary metal oxide thin film electrodes - ScienceDirect