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Download scientific diagram | EDS spectrum N+O+DLC sample. Figure 2. Raman spectrum DLC sample. from publication: Tribological behavior of DLC films deposited on nitrided and post-oxidized stainless steel by PACVD | In this work, the tribological behavior and adhesion of DLC films deposited by PACVD on AISI 420 martensitic stainless steel was evaluated. Prior to DLC deposition, the samples were nitrided and some of them also post-oxidized. The films were characterized by Raman and EDS, | Stainless Steel, Tribology and Nitrides | ResearchGate, the professional network for scientists.
Improving the protective properties of an artificial joint friction couple by using TiN and DLC films - ScienceDirect
The rise of carbon materials for field emission - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/D0TC05873D
Eugenia DALIBON Doctor in Science and Technology of Materials
Diamond-like carbon graphene nanoplatelet nanocomposites for lubricated environments - ScienceDirect
Effect of Bias Voltage on Characteristics of Multilayer Si-DLC Film Coated on AA6061 Aluminum Alloy
Sub-micron structuring/texturing of diamond-like carbon-coated replication masters with a femtosecond laser
Coatings, Free Full-Text
Evaluation of Diamond Like Carbon (DLC) - JASCO
SEM image of the DLC film. Figure 4. SEM-FIB view of the oxide
Eugenia DALIBON Doctor in Science and Technology of Materials
Deconvolution process approach in Raman spectra of DLC coating to determine the sp3 hybridization content using the ID/IG ratio in relation to the quantification determined by X-ray photoelectron spectroscopy - ScienceDirect
View of Nonstoichiometric tin oxide films: study by X-ray diffraction, Raman scattering and electron paramagnetic resonance
Modulation of Si on microstructure and tribo-mechanical properties of hydrogen-free DLC films prepared by magnetron sputtering - ScienceDirect
Raman spectra of the multilayer Si-DLC films deposited at different
Full article: Gold nanoparticles doped organic liquid crystalline material for fast charge migration in nano-devices